| PART |
Description |
Maker |
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR27V6452DMA MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| MSM27V3255CZ |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| R1LV0816ASD-5SI R1LV0816ASD-7SI |
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
|
Renesas Electronics Corporation
|
| UPD23C16040BLGX UPD23C16040BLGY-MJH UPD23C16040BL |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
| UPD23C16000BL UPD23C16000BLGX UPD23C16000BLGX-XXX |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
|
NEC
|
| UPD23C32000ALGY-XXX-MKH UPD23C32000AL UPD23C32000A |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
|
NEC[NEC]
|
| CY7C1425AV18 CY7C1414AV18-167BZI CY7C1414AV18-167B |
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mb QDR-II SRAM2-Word Burst结构36-Mb QDR-II SRAM2-Word Burst结构 36 - MB的QDR - II型的SRAM2字突发结构）6 - MB的QDR - II型的SRAM2字突发结构）
|
Cypress Semiconductor Corp.
|
