| PART |
Description |
Maker |
| 2SK3117 |
N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK30ATM |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Toshiba Semiconductor
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| NTE859 NTE859SM |
Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier
|
NTE[NTE Electronics]
|
| NTE1223 |
Integrated Circuit Low Noise High Gain Pre−Amplifier Circuit For General Purpose Audio Pre−Amplifiers
|
NTE Electronics
|
| AD603SQ/883B AD603 AD603SQ883B |
Low noise, 90 MHz variable-gain amplifier
Low Noise, 90 MHz Variable Gain Amplifier
Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems
|
Analog Devices, Inc.
|
| EL5134 EL5135 EL5235IS-T7 EL5235IS-T13 EL5235IS EL |
Single, 630MHz Low Noise Amplifier with Enable
Dual, 630MHz, Low Noise Amplifier with Enable
From old datasheet system
630MHz Gain of 5 Low Noise Amplifiers
630MHz, Gain of 5, Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
| EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier
Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|
| ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
