| PART |
Description |
Maker |
| MJE18204-D |
SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
ON Semiconductor
|
| MJE18002G |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007-Q MJE13007G-Q-TA3-T |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| MJE13007-P |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| FA5311 FA5315P FA5315PS FA5310 FA5310BP FA5310BPS |
Bipolar IC For Switching Power Supply Control
|
FUJI[Fuji Electric]
COLLMER SEMICONDUCTOR INC
|
| FA5304AP FA5304APS FA5305AP FA5305APS FA5304AS FA5 |
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
|
| BUL147-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
Power 10A 400V NPN
|
ON Semiconductor
|
| STRS6708 STRS6709 STR-S6709 STR-S6707 STR-S6708 ST |
(STRS6707 - STRS6709) OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS ? WITH BIPOLAR SWITCHING TRANSISTOR
|
ALLEGRO[Allegro MicroSystems]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION
|
TOSHIBA
|
| GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
