| PART |
Description |
Maker |
| TISP61089S TISP61089SD TISP61089SDR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
|
| TCM1030DR TCM1060D TCM1060DR TCM1060P LB1201AB LB1 |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 双远期导电的P -可编程门晶闸管过压保
|
Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
|
| TISPPBL3D TISPPBL3DR-S TISPPBL3DR TISPPBL3 TISPPBL |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
|
BOURNS[Bourns Electronic Solutions]
|
| TISP61089ADR |
TISP Thyristor Overvoltage Protectors Dual P Gate Forward Conducting TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
|
Bourns, Inc.
|
| TISP1120F3D |
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR
|
Bourns Electronic Solutions
|
| 5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
| HCTS20MS HCTS20D_SAMPLE HCTS20DMSR HCTS20HMSR HCTS |
NAND-Gate, 4-Input, TTL Inputs, Dual, Rad-Hard, High-Speed, CMOS, Logic
Switch Boot; For Use With:Toggle Switches
Radiation Hardened Dual 4-Input NAND Gate HCT SERIES, DUAL 4-INPUT NAND GATE, CDFP14
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
