| PART |
Description |
Maker |
| HM62G18256 |
4M Synchronous Fast Static RAM (256k-words ×18-bits)(4M同步快速静态RAM(256k×18) 4分同步快速静态存储器56k -字18位）分同步快速静态随机存储器56k字18位）
|
Hitachi,Ltd.
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| LC36256AML-10W LC36256AML-85W LC36256AML-70W LC362 |
256K (32768 words x 8 bits ) SRAM
|
SANYO
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| MSM54V12222A |
From old datasheet system
262214 Words x 12 Bits FIELD MEMORY
262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|
| MB85411 |
65536 Words x 9-Bit
|
Fujitsu
|
| LC33832M LC33832ML-10 LC33832ML-70 LC33832ML-80 LC |
256K (32768word x 8bit) Pseudo-SRAM
256 K (32768 words X 8 bits) Pseudo-SRAM 256度（32768字8位）伪SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| EDE5116AFSE-5C-E EDE5116AFSE-6E-E EDE5116AFSE-4A-E |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory, Inc.
|
| CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
Catalyst Semiconductor
EEPROM
ON Semiconductor
NXP Semiconductors N.V.
|
| EDD1232AABH-7A-E EDD1232AABH EDD1232AABH-6B-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
