| PART |
Description |
Maker |
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| IS62WV25616DALL/DBLL IS65WV25616DBLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS65WV25616DBLL-55CTLA3 IS62WV25616DALL-55TI IS62W |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS62WV6416BLL IS62WV6416BLL-45B IS62WV6416BLL-45BI |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS66WV51216ALL IS66WV51216BLL IS66WV51216ALL-70TLI |
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62LV12816BLL IS62LV12816BLL-10B IS62LV12816BLL-1 |
x16 SRAM x16的SRAM
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| BS616UV4010EI BS616UV4010 BS616UV4010BC BS616UV401 |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV8010BI BS616UV8010 BS616UV8010BC |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS62UV4000STI BS62UV4000 BS62UV4000EC BS62UV4000EI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV8011BC BS616UV8011FI BS616UV8011 BS616UV801 |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV402 |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
