| PART |
Description |
Maker |
| APT10050JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
| APT10050B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 21A 0.500 Ohm
|
Advanced Power Technology
|
| APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| APT10040B2VFR APT10040LVFR |
POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
RELAY SSR SPST 280VAC 10A DIN MT
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| M68701M |
Silicon MOS FET Power Amplifier, 860-915MHz 6W FM / Digital Mobile
From old datasheet system
|
Mitsubishi Electric Corporation
|
| APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM
|
Advanced Power Technology
|
| APT1004RGN |
POWER MOS IV 1000V 3.3A 4.00 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT10050JN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 20.5A 0.50 Ohm
|
Advanced Power Technology
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
