PART |
Description |
Maker |
SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation] SONY [Sony Corporation]
|
3SK147 |
GAAS N-CHANNEL DUAL-GATE MES FET
|
Sony Corporation
|
3SK149 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
3SK240 |
Field Effect Transistor GaAs N-Channel Dual Gate MES Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
3SK184 |
GaAs N-Channel MES FET
|
Panasonic
|
NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
NE722S01 NE722S01-T NE722S01-T1B1 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
Duracell NEC Corp. NEC[NEC]
|
NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC] ETC
|
NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1% C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE960R575 NE960R500 NE960R5 NE961R500 NE962R575 |
0.5 W X, Ku-BAND POWER GaAs MES FET 0.5 W X Ku-BAND POWER GaAs MES FET
|
NEC[NEC]
|