PART |
Description |
Maker |
HM5165805F HM5165805FJ HM5164805FLJ HM5165805FTT H |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh 64目等内存 Mword × 8位)8亩刷 4亩刷 (HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
http:// Hitachi Semiconductor Hitachi,Ltd.
|
HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405TS |
16M EDO DRAM (4-MWORD X 4-BIT) 4K REFRESH / 2K REFRESH
|
HITACHI[Hitachi Semiconductor]
|
HM5112805FLTD-6 HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
http:// Hitachi,Ltd.
|
HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
LT3420 LT3420EMSTRPBF LT3420-1 |
Photoflash Capacitor Chargers with Automatic Refresh Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C SPECIALTY ANALOG CIRCUIT, PDSO10
|
Linear Technology, Corp. Linear Technology Corporation
|
M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
MRA4005T1 MRA4004 MRA4004T3 MRA4004T3G MRA4003 MRA |
Surface Mount Standard Recovery Power Rectifier 1 A, 600 V, SILICON, SIGNAL DIODE 1A 600V Standard Recovery Rectifier 1A 400V Standard Recovery Rectifier 1A 800V Standard Recovery Rectifier 1A 1000V Standard Recovery Rectifier
|
ONSEMI[ON Semiconductor]
|
HYB5118160BSJ-60 HYB5118160BSJ-50 HYB3118160 HYB31 |
1M x 16 Bit 5 V 60 ns FPM DRAM 1M x 16 Bit 5 V 50 ns FPM DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode) 1M*16-Bit Dynamic RAM
1k Refresh
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
BTA40A BTA40B 2939 BTA40-400B BTA40-400A BTA40-600 |
Standard triac, 40Ampere, 800V Standard triac, 40Ampere, 700V Standard triac, 40Ampere, 600V Standard triac, 40Ampere, 400V From old datasheet system STANDARD TRIACS RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 12V; Power: 1W; Pot-Core Transformer - separated
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
|