PART |
Description |
Maker |
BBY51-03W BBY5103W Q62702-B663 |
ER 9C 6#16 3#12 PIN RECP BOX Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B0862 BBY5302W BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
KDV147 KDV147B KDV147C KDV147E |
Silicon diode for FM radio band tuning applications VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(FM RADIO BAND TUNING
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
KDV262 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
SVC203C09 |
Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
Sanyo Semicon Device
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