PART |
Description |
Maker |
M66282FP |
8192 × 8-Bit Line Memory 8192 】 8-Bit Line Memory
|
Renesas Electronics Corporation
|
MB8518H |
UV ERASABLE 8192-BIT READ ONLY MEMORY
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
M41T56C64MY6F M41T56C64 M41T56C64MY6E |
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM(56 bytes NVRAM4 Kbit (8192 bit x 8) EEPROM的串行实时时 Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 |
Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
|
SANYO
|
STM32F101X608 |
Access line, advanced ARM-based 32-bit MCU with Flash memory, six 16-bit timers, ADC and seven communication interfaces
|
STMicroelectronics
|
M66280FP |
5120 × 8-Bit Line Memory 5120 】 8-Bit Line Memory
|
Renesas Electronics Corporation
|
MB8518H |
UV Erasable 8192-Bit ROM
|
Fujitsu
|
M66256FP M66256 |
5120 x 8-BIT LINE MEMORY (FIFO) 5120 ?8-BIT LINE MEMORY (FIFO)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M66250FP M66250P |
5120*8-BIT LINE MEMORY(FIFO/LIFO)
|
Renesas Electronics Corporation
|
MAQ9264C70CB MAQ9264C70CC MAQ9264C70CE MAQ9264C70C |
Radiation hard 8192 x 8 bit static RAM
|
Dynex Semiconductor
|
HN27C64G |
8192-word x 8-bit UV Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|