| PART |
Description |
Maker |
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| LC361000AMLL-10X LC361000ARLL-10X LC361000ATLL-10X |
1 MEG (131072 words x 8 bits) SRAM
|
Sanyo Electric Co., Ltd.
|
| LC374100SM LC374100ST |
4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
SANYO[Sanyo Semicon Device]
|
| LC322271J LC322271T-80 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write 2迈可31072字16位），内存快速页面模式，字节
|
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| IS42S16400F-7TL-TR IC42S16400F-7TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS45S16400E-6TLA1 IS45S16400E-7TLA1 IS45S16400E-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16400D-7BL IS42S16400D-7BLI IS42S16400D-7T IS |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42S16400B-7T IS42S16400B-6T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| MB85411 |
65536 Words x 9-Bit
|
Fujitsu
|
| MB85410 |
65536 Words x 8-Bit
|
Fujitsu
|
| EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
