| PART |
Description |
Maker |
| IDT70T3599S200DRI IDT70T3519 IDT70T3519S133BC IDT7 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45 |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 25 ns, CDIP22
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 45 ns, PDSO24
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静态CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 15 ns, QCC22
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IDT70T3519S133DR IDT70T3519S133BC |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT70V658S15BC IDT70V658S15BCI IDT70V658S15BF IDT7 |
From old datasheet system
Dual N-Channel Digital FET
30V N-Channel PowerTrench MOSFET
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| 70V28L20PFGI |
64K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| W25S243AF-12 W25S243A W25S243A-12 W25S243AD-12 |
DIODE SCHOTTKY QUAD SERIES (RAIL CLAMP) 25V 200mW 0.35V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL 64K X 64 STANDARD SRAM, 12 ns, PQFP128
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| V61C31161024 V61C31161024-12T |
64K x 16 HIGH SPEED STATIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| MB81C71A |
CMOS 64K-Bit High Speed SRAM
|
Fujitsu
|
