| PART |
Description |
Maker |
| N275CH04 N275CH04LOO N275CH04KOO N275CH04HOO N275C |
769.3 A, 400 V, SCR, TO-200AB
5565.65 A, 400 V, SCR
1640.65 A, 600 V, SCR, TO-200AC
36.11 A, 1200 V, SCR, TO-48
2614.05 A, 1400 V, SCR
3799.4 A, 3400 V, SCR
2610.91 A, 2600 V, SCR
133.45 A, 800 V, SCR
4474.5 A, 4200 V, SCR
3925 A, 4500 V, SCR
3925 A, 4400 V, SCR
2692.55 A, 1600 V, SCR
70.65 A, 200 V, SCR, TO-65
3595.3 A, 400 V, SCR
3595.3 A, 200 V, SCR
4003.5 A, 2800 V, SCR
1428.7 A, 1800 V, SCR, TO-200AC
1428.7 A, 1600 V, SCR, TO-200AC
612.3 A, 1600 V, SCR
32.97 A, 1000 V, SCR, TO-48
98.91 A, 1000 V, SCR, TO-65
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| N0676YS120-180 N0782YS120-160 N0992YS020-060 N0734 |
1346 A, 1800 V, SCR
1554 A, 1600 V, SCR
1995 A, 600 V, SCR
1465 A, 1600 V, SCR
1201 A, 2400 V, SCR
|
Westcode Semiconductors, Ltd.
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| 3JH45 E001681 |
From old datasheet system
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50R |
100V 50A Phase Control SCR in a TO-208AC (TO-65) package
800V 50A Phase Control SCR in a TO-208AC (TO-65) package
1000V 50A Phase Control SCR in a TO-208AC (TO-65) package
400V 50A Phase Control SCR in a TO-208AC (TO-65) package
1600V 80A Phase Control SCR in a TO-208AC (TO-65) package
1200V 50A Phase Control SCR in a TO-208AC (TO-65) package
1400V 80A Phase Control SCR in a TO-208AC (TO-65) package
600V 50A Phase Control SCR in a TO-208AC (TO-65) package
MEDIUM POWER THYRISTORS
Silicon Controlled Rectifier, 80 A, 1600 V, SCR, TO-208AC, TO-65, 2 PIN
|
IRF[International Rectifier]
Vishay Semiconductors
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5
100 A, 800 V, SCR
120 A, 1100 V, SCR
120 A, 1200 V, SCR
120 A, 1300 V, SCR
120 A, 1000 V, SCR
|
|
| TGF148-600B TGF148-1200B TGF148-800B TGF148-1000B |
63 A, 600 V, SCR, TO-65
63 A, 1200 V, SCR, TO-65
63 A, 800 V, SCR, TO-65
63 A, 1000 V, SCR, TO-65
|
ST Microelectronics
|
| CS16-06GO2 CS5-06GO2 CS5-02GO2 CS112-12IO8 CS52-14 |
30 A, 600 V, SCR, TO-208AA
18.055 A, 600 V, SCR, TO-64
18.055 A, 200 V, SCR, TO-64
220 A, 1200 V, SCR, TO-209AC
120 A, 1400 V, SCR, TO-209AC
|
IXYS CORP
|
| MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅，SCR /二极管模
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| DSA26 DSA26G |
Diffused Junction Type Silicon Diode 2.6A Power Rectifier
|
SANYO
|
| 2SC4690 |
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
|
