| PART |
Description |
Maker |
| MAX662A |
12V, 30mA Flash Memory Programming Supply(12V,30mA快擦写存储器编程电源,电荷泵电压转换器) 12V30mA闪存存储器编程电
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Maxim Integrated Products, Inc.
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| MAX662A MAX662ACPA MAX662ACSA MAX662AEPA MAX662AES |
12V, 30mA Flash Memory Programming Supply
12V 30mA Flash Memory Programming Supply
12V / 30mA Flash Memory Programming Supply
Quadruple 2-Input Exclusive-OR Gates 14-CDIP -55 to 125
Decade Counter 14-CDIP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8
Quadruple 2-Input Exclusive-OR Gates 14-CFP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8
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Maxim Integrated Produc...
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
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| LTC1262-15 |
12V, 30mA Flash Memory Programming Supply
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Linear Technology
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| BL8052 |
12V, 30mA Flash Memory Programming Supply
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SHANGHAI BELLING CO., L...
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| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
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| MX10E8050IA MX10E8050IAQC MX10E8050IPC MX10E8050IQ |
On-chip Flash program memory with in-system programming
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MCNIX[Macronix International]
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| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MX10E8050IUC MX10E80501 |
On-chip Flash program memory with in-system programming 片上闪存程序存储器在系统编程
|
微控制器/微处理器
Macronix International Co., Ltd.
|
| MX28F1000PRI-70 MX28F1000PQI-70 MX28F1000PRC-90C4 |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 70 ns, PDIP32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
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http://
Macronix International Co., Ltd.
|
| ATMEGA162 ATMEGA162L ATMEGA162V |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz.
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation.
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 1 MIPS throughput at 1 MHz.
|
Atmel
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| ATTINY26 ATTINY26-16MC ATTINY26-16MI ATTINY26-16PC |
8-bit Microcontroller with 2K Bytes Flash
2K Flash Program Memory, 160 Bytes SRAM, 128 Bytes EEPROM, 11 Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 8 MIPS throughput at 8 MHz. 3-volt operation
2K Flash Program Memory, 128 Bytes SRAM, 128-Byte EEPROM, 11-Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 16 MIPS throughput at 16 MHz
75 1% 1/16W 0402
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ATMEL[ATMEL Corporation]
Atmel Corp.
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