Part Number Hot Search : 
S0103TR 1086CM SI805 F06A40 C1512 N06CL U21008 SP8J4
Product Description
Full Text Search

HAT2022R - Silicon N Channel Power MOS FET High Speed Power Switching

HAT2022R_103152.PDF Datasheet

 
Part No. HAT2022R
Description Silicon N Channel Power MOS FET High Speed Power Switching

File Size 49.52K  /  9 Page  

Maker


HITACHI[Hitachi Semiconductor]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HAT2022R-EL
Maker: HITACHI(日立)
Pack: SOP-8
Stock: 2727
Unit price for :
    50: $1.40
  100: $1.33
1000: $1.26

Email: oulindz@gmail.com

Contact us

Homepage http://www.renesas.com/eng/
Download [ ]
[ HAT2022R Datasheet PDF Downlaod from Datasheet.HK ]
[HAT2022R Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for HAT2022R ]

[ Price & Availability of HAT2022R by FindChips.com ]

 Full text search : Silicon N Channel Power MOS FET High Speed Power Switching
 Product Description search : Silicon N Channel Power MOS FET High Speed Power Switching


 Related Part Number
PART Description Maker
PU61C56 Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
Panasonic
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
NEC[NEC]
HAT2058R09 HAT2058R-EL-E 4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
Analog Devices, Inc.
Renesas Electronics Corporation
RJK0222DNS-00-J5 Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
Renesas Electronics Corporation
2SK1739A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
Toshiba Semiconductor
2SK1739A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
Toshiba Semiconductor
Sanyo Semicon Device
RJK0351DPA10 RJK0351DPA-00-J0 Silicon N Channel Power MOS FET Power Switching
40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Renesas Electronics Corporation
RJK0346DPA RJK0346DPA-00-J0 65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
RJK0348DPA10 RJK0348DPA-00-J0 Silicon N Channel Power MOS FET Power Switching
50 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK(2), 8 PIN
Renesas Electronics Corporation
2SK1310A EA09774 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
From old datasheet system
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
Toshiba Semiconductor
RJK1212DNS-00-J5 Silicon N Channel Power MOS FET Power Switching
3 A, 120 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN AND LEAD FREE, PLASTIC, HWSON-8
Renesas Electronics Corporation
 
 Related keyword From Full Text Search System
HAT2022R Detector HAT2022R siemens HAT2022R single cell HAT2022R FRE DOUNLODE HAT2022R instruments
HAT2022R preis HAT2022R Command HAT2022R volts HAT2022R Diode HAT2022R Derating Rule
 

 

Price & Availability of HAT2022R

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.52548503875732