| PART |
Description |
Maker |
| 11EQ04 |
Schottky Barrier Diode
SBD
|
Nihon Inter Electronics Corporation
|
| NSQ03A03L |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
ETC
|
| FCH10A09 |
SBD
Schottky Barrier Diode
|
Nihon Inter Electronics Corporation
|
| FCH08U10 NIHONINTERELECTRONICSCORP-FCH08U10 |
8A Avg 100 Volts SBD
Schottky Barrier Diode
|
NIEC[Nihon Inter Electronics Corporation]
|
| UPA508TE-T2 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| MA3S795E MA3S795D MA795WK MA795WA |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| MA3Z792E MA3Z792D MA3Z792DMA792WA MA792WA MA792WK |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Matsshita / Panasonic
|
| SCH2807 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| SCH2830 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5855 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2808 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
