| PART |
Description |
Maker |
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FDS9412 |
Single N-Channel Enhancement Mode Field Effect Transistor
Single N-Channel Enhancement Mode Field Effect Transistor 7900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STP80NE06-10 5632 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
ST Microelectronics
STMicroelectronics
|
| DMN3030LSS-13 |
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
Diodes Inc.
|
| DMN3052LSS-13 |
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| DMP2022LSS-13 |
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
Diodes Inc.
|
| DMP3015LSS-13 |
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| STB80NE06-10 5631 -STB80NE06-10 STB80NE06-10T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 80A I(D) | TO-263AB
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
STMicroelectronics
|
| NDS8410 |
Single N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| NDS8434 |
Single P-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| CEM0310 |
Single N-Channel Enhancement Mode Field Effect Transistor
|
Chino-Excel Technology
|
