| PART |
Description |
Maker |
| STP4NC80ZFP STP4NC80Z STB4NC80Z STB4NC80Z-1 |
N沟道800V 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP4NC80Z STB4NC80ZT4 STB4NC80Z-1 STB4NC80Z STP4NC |
N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET N沟道800V.4欧姆4A条到22020FP采用D2PAK I2PAK稳压第三MOSFET的保护POWERMESH
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800V 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 |
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRFBC20L IRFBC20S |
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
IRF[International Rectifier]
|
| W13NK100Z STW13NK100Z STW13NK100Z_06 STW13NK100Z06 |
N-channel 1000V - 0.56?/a> - 13A - TO-247 Zener - Protected SuperMESH?/a> PowerMOSFET
N-channel 1000V - 0.56з - 13A - TO-247 Zener - Protected SuperMESH⑩ PowerMOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| GBU410-G |
Bridge Rectifiers, V-RRM=1000V, V-DC=1000V, I-(AV)=4A
|
Comchip Technology
|
| APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
