| PART |
Description |
Maker |
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| MAMX-009646-23DBML |
E-Series Surface Mount Mixer 2-2200 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PTL-16-430 PTL-10-432 PTL-44-430 PTL-46-430 ECL-11 |
TLS 2200 Voice & Data Comm Materials
|
List of Unclassifed Manufacturers
|
| MAAVCC0002 MAAVCC0002-TB MAAVCC0002TR |
Voltage Variable Absorptive Attenuator 1700 - 2200 MHz
|
Tyco Electronics
|
| C03DE220HV STC03DE220HV STC03DE220HV08 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 ?
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 搂?
|
STMicroelectronics
|
| 2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor
BJT
|
GHz Technology
|
| 2224-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
BJT
|
GHz Technology
|
| SM0822-39 |
800-2200 MHz 8 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| SM2022-50L |
2000-2200 MHz 100 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| C927U222MYWDBA7317 |
Ceramic, Safety, C900_Y, 2200 pF, 20%, Y5U, Lead Spacing = 7.5mm
|
Kemet Corporation
|
| PTMA210152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 ?2200 MHz
|
Cree, Inc
|
|
