PART |
Description |
Maker |
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 Bulk Erase Flash Memory, 1Mb 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
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http:// CATALYST[Catalyst Semiconductor] ON SEMICONDUCTOR
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M28F201 M28F201-120K6R M28F201-120XK6R M28F201-120 |
Triple 3-Input Positive-NOR Gates 14-SOIC 0 to 70 Triple 3-Input Positive-NOR Gates 14-PDIP 0 to 70 9-Bit Parity Generators/Checkers 14-SOIC 0 to 70 Quadruple 2-Input Multiplexers With Storage 16-PDIP 0 to 70 8-Input Positive-NAND Gates 14-SSOP 0 to 70 9-Bit Parity Generators/Checkers 14-PDIP 0 to 70 2 MB56K × 8,芯片擦除闪 9-Bit Parity Generators/Checkers 14-SO 0 to 70 2 MB56K × 8,芯片擦除闪 2 Mb 256K x 8, Chip Erase FLASH MEMORY 2 MB56K × 8,芯片擦除闪 8-Input Positive-NAND Gates 14-SO 0 to 70 2 MB56K × 8,芯片擦除闪 9-Bit Parity Generators/Checkers With Bus-Driver Parity I/O Ports 14-SOIC 0 to 70 2 MB56K × 8,芯片擦除闪 2 Mb 256K x 8/ Chip Erase FLASH MEMORY 2 Mb 256K x 8, Chip Erase FLASH MEMORY 2 MB256K × 8,芯片擦除闪 8-Input Positive-NAND Gates 14-SOIC 0 to 70 2 MB256K × 8,芯片擦除闪
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意法半导 STMicroelectronics N.V.
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LC87F14C8A |
CMOS IC FROM 128K byte, RAM 10K byte on-chip 8-bit 1-chip Microcontroller with USB-host controller
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Sanyo Semicon Device
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LC87F7LC8A |
CMOS IC FROM 128K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller
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Sanyo Semicon Device
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28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 CONNECTOR ACCESSORY POT 100K OHM THUMBWHEEL CERM ST
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http:// NXP Semiconductors N.V. Maxwell Technologies, Inc
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AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory Gate Driver; Package: PG-DSO-8; RthJA (max): -; 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位)的CMOS 3.0伏特,只有扇区擦除闪 CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位)的CMOS 3.0伏特,只有扇区擦除闪
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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LC88F52H0A |
FROM 128K byte, RAM 6K byte on-chip 16-bit 1-chip Microcontroller
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Sanyo Semicon Device
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DS5001FP-16N DS5001FP-16 DS5001FP DS5001FP-12-44 |
128k Soft Microprocessor Chip
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MAXIM - Dallas Semiconductor Dallas Semiconducotr DALLAS[Dallas Semiconductor]
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AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
MT5C1008C-30LL/MIL |
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
|
Austin Semiconductor, Inc
|
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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http:// Maxwell Technologies, Inc
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