| PART |
Description |
Maker |
| IS61DDB41M18A |
1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7Q163652A K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7B161825A K7A163600A K7A163601A K7B163625A K7A161 |
512Kx36 & 1Mx18 Synchronous SRAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
ITT, Corp.
|
| IS61QDB251236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| IS61QDP2B251236A IS61QDP2B251236A1 IS61QDP2B251236 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7Q161864B K7Q161864B-FC16 K7Q163664B K7Q163664B-F |
512Kx36 & 1Mx18 QDR TM b4 SRAM
|
Samsung semiconductor
|
| K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7N163645AK7N163245AK7N161845A |
512Kx36/32 & 1Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7Q161864B |
(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
|
Samsung semiconductor
|
| K7J161882B |
(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
