| PART |
Description |
Maker |
| GB840 |
SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 8A RECTIFIE
|
GTM CORPORATION
|
| NTE115 |
0.0002 A, 20 V, 2 ELEMENT, SELENIUM, SIGNAL DIODE
|
|
| KBP206 KBP208 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIE
|
Yea Shin Technology Co., Ltd
|
| TX2-12V |
TX-relay. 2 Amp. High capacity relay with high surge voltage & high breakdown voltage. Standard PC board terminal. Single side stable. Nominal voltage 12 V DC.
|
Panasonic / NAiS
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| MSK610 MSK610-15 MSK610B |
VERY WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
Ultra Low Quiescent Current - ±12mA for High Voltage Stage
|
Anaren Microwave
M.S. Kennedy Corporatio...
|
| 2SC4475 |
NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| 2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications
|
Sanyo
|
| MMBT5550 |
High Voltage FET-Input Operational Amplifier 8-SO PowerPAD
NPN (HIGH VOLTAGE TRANSISTOR)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
