| PART |
Description |
Maker |
| NTE734 |
Integrated Circuit TV FM IF Gain Block
|
NTE Electronics
|
| TA4018F |
Bipolar Linear Integrated Circuit Silicon Monolithic VHF Gain Control Amplifier Application
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD5754T7A UPD5754T7A-E1 UPD5754T7A-E1-A |
SiGe/CMOS Integrated Circuit 4 * 2 IF Switch Matrix with Gain and Tone
|
Renesas Electronics Corporation
|
| 5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
| MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
| BF1009 Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
From old datasheet system
Silicon N-Channel MOSFET Tetrode (For low noise high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| IRMD2214SS IRMD22141SS |
High Current Gate Driver for AC or Brushless DC Motors with integrated desaturation detection circuit. (ECONO2-6PACK IGBT module ...
High Current Gate Driver for AC or Brushless DC Motors with integrated desaturation detection circuit with active bias. (ECONO2-6PACK ...
|
International Rectifier
|
| NTE919D NTE919 |
Integrated Circuit High Speed Dual Comparator
|
NTE[NTE Electronics]
|
| BF1005 Q62702-F1498 SIEMENSAG-Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| UPG2181T5R |
GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH
|
CEL
|
