| PART |
Description |
Maker |
| HFA16TB120 |
1200V 16A HEXFRED Discrete Diode in a TO-220AC package
|
International Rectifier
|
| HFA25TB60S |
600V 25A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
| HFA06TB120 HFB06TB120 |
Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode
1200V 6A HEXFRED Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
|
| HFA105NH60 |
600V 105A HEXFRED Discrete Diode in a D-67 Half-Pak package
|
International Rectifier
|
| HFA120EA60 HFA120FA60 |
600V 60A HEXFRED Discrete Diode in a SOT-227 package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| FGW40N120H |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRG7PH35UD1-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| HFA35HB120 |
1200V 11A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
|
International Rectifier
|
| IRG7PH28UD1PBF |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
