| PART |
Description |
Maker |
| TLN203 |
INFRARED LED FOR PHOTOSENSORS
|
Toshiba Semiconductor
|
| TLN113 |
INFRARED LED FOR PHOTOSENSORS
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN103A |
INFRARED LED FOR PHOTOSENSORS
|
TOSHIBA[Toshiba Semiconductor]
|
| CNA1011K ON1113 |
Opto-Electronic Device - PhotocouplersPhotosensors - Transmissive Photosensors
Transmissive Photosensors (Photo Interrupters)
|
Matsshita / Panasonic
|
| ON1109 CNZ1109 CNZ1109ON1109 |
Opto-Electronic Device - Photocouplers路Photosensors - Transmissive Photosensors
Transmissive Photosensors (Photo Interrupters)
Opto-Electronic Device - PhotocouplersPhotosensors - Transmissive Photosensors
|
Matsshita / Panasonic
|
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
