| PART |
Description |
Maker |
| TH58100FTI |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55V4366FF TC55V4366FF-133 TC55V4366FF-150 TC55V4 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| 2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET
Power F-MOS FETs
|
Matsshita / Panasonic
|
| TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TC55VEM208ASTN55 TC55VEM208ASTN40 TOSHIBACORPORATI |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
524,288-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V4366FF-150 TC55V4366FF-133 TC55V4366FF-167 |
131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
|
| TC55V16256FTI TC55V16256FTI-12 TC55V16256FTI-15 TC |
262, 144-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WHM516AXGN70 TC51WHM516AXGN65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCF8302 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
