PART |
Description |
Maker |
IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A 200V N-Channel MOSFET
|
Fairchild Semiconductor
|
FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series From old datasheet system 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A 200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRFNL210B EA0610P |
200V N-Channel MOSFET 200V N-Channel B-FET TO-92L
|
FAIRCHILD[Fairchild Semiconductor]
|
SFR9210 SFU9210 SFR9210F SFU9210TUAM002 |
200V P-Channel A-FET Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRLR210 IRLR210A IRLR210ATF IRLR210ATM |
ADVANCED POWER MOSFET 200V N-Channel Logic Level A-FET / Substitute of IRLR210
|
Fairchild Semiconductor
|
IRLI620ATU IRLW620ATM |
200V N-Channel Logic Level A-FET Power MOSFET N-CHANNEL MOSFET
|
Fairchild Semiconductor
|
ZVN0120L ZVN0120 ZVN0120A ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements 200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY 200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package 200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET 200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
FQB5N20L FQI5N20L FQI5N20 FQI5N20LTU |
200V LOGIC N-Channel MOSFET 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200V9A条,沟道,功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|