| PART |
Description |
Maker |
| ADAPTERS-TYPE-NSMA TYPE-NSMA TYPE-N_SMA ADAPTERS-T |
50OHM/ DC to 18 GHz
50OHM / DC to 18 GHz
50OHM, DC to 18 GHz
50OHM, DC to 18 GHz
|
RF连接
MINI[Mini-Circuits]
http://
|
| VNA-28 |
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
ETC
Mini-Circuits
|
| ADAPTENUATORS SM-BM-6 NF-BF-10 NF-BF-3 NF-BF-6 NF- |
50OHM, 3,6,10 dB, DC to 2000 MHz Adaptenuators 0 MHz - 2000 MHz RF/MICROWAVE FIXED ATTENUATOR
50OHM, 3,6,10 dB, DC to 2000 MHz Adaptenuators
50OHM/ 3/6/10 dB/ DC to 2000 MHz Adaptenuators
50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
|
衰减
MINI[Mini-Circuits]
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| VNA-23 |
.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
High Directivity Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| FAR-F5KA-897M50-D4DC |
EGSM Tx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
| RFP-060120A15Z50 |
Alumina Terminations 8 Watts 50ohm
|
Anaren Microwave
|
| RFP-050060-15X50-2 |
Chip Terminations 4 Watts, 50ohm
|
Anaren Microwave
|
| JSPHS-26 |
50Ohm 180° Voltage Variable 18 to 26 MHz
50Ohm 180∑ Voltage Variable 18 to 26 MHz
|
Mini-Circuits
|
| RFP-100200A25Z50 |
Surface Mount Termination 10 Watts, 50ohm
|
Anaren Microwave
|
| VAT-5_ VAT-5 |
SMA Fixed Attenuator (50ohm 1W 5dB DC to 6000 MHz)
|
MINI[Mini-Circuits]
|
