| PART |
Description |
Maker |
| UMX4N EMX4 IMX4 UMW6N |
High transition frequency (dual transistors)
|
ROHM[Rohm]
|
| 2SA1200 |
High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SC2404 |
Optimum for RF amplification of FM/AM radios High transition frequency fT
|
TY Semiconductor Co., Ltd
|
| 2SC3547A |
Transition frequency is high and dependent on current excellently.
|
TY Semiconductor Co., Ltd
|
| 2SC3437 |
High transition frequency: fT = 400 MHz (typ). Low saturation voltage: VCE (sat) = 0.3 V (max).
|
TY Semiconductor Co., Ltd
|
| MAX8625A MAX8625AETD |
High-Efficiency, Seamless Transition, Step-Up/Down DC-DC Converter
|
Maxim Integrated Produc...
|
| ISL3332 ISL3332IAZ ISL3333IRZ |
3.3V, ±15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers; Temperature Range: -40°C to 85°C; Package: 28-SSOP DUAL LINE TRANSCEIVER, PDSO28
3.3V, ±15kV ESD Protected, Two Port, Dua Protocol RS-232/RS-485 Transceivers
3.3V, 隆戮15kV ESD Protected, Two Port, Dua Protocol RS-232/RS-485 Transceivers
|
Intersil, Corp.
Intersil Corporation
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RIO-3310S-A1E RIO-3310S-A2E RIO-3309S-A1E RIO-3309 |
6U CompactPCI垄莽 Rear Transition Boards
6U CompactPCI? Rear Transition Boards
|
Advantech Co., Ltd.
|
| 15GN01FA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01CA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
