Part Number Hot Search : 
STTH5 MIC4043 SPN7400 BF579R CZTUX87 B82143A MT6S68K MBD444
Product Description
Full Text Search

UCN5910A - HIGH-VOLTAGE BiMOS III 10-BIT SERIAL-INPUT, LATCHED DRIVERS

UCN5910A_60190.PDF Datasheet

 
Part No. UCN5910A UCN5910A-2 UCN5910LW UCN5910LW-2 5910
Description HIGH-VOLTAGE BiMOS III 10-BIT SERIAL-INPUT, LATCHED DRIVERS

File Size 138.08K  /  8 Page  

Maker


http://
ALLEGRO[Allegro MicroSystems]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: UCN5800L
Maker: ALLEGRO
Pack: SOP14
Stock: 832
Unit price for :
    50: $1.85
  100: $1.76
1000: $1.67

Email: oulindz@gmail.com

Contact us

Homepage http://www.allegromicro.com/
Download [ ]
[ UCN5910A UCN5910A-2 UCN5910LW UCN5910LW-2 5910 Datasheet PDF Downlaod from Datasheet.HK ]
[UCN5910A UCN5910A-2 UCN5910LW UCN5910LW-2 5910 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for UCN5910A ]

[ Price & Availability of UCN5910A by FindChips.com ]

 Full text search : HIGH-VOLTAGE BiMOS III 10-BIT SERIAL-INPUT, LATCHED DRIVERS


 Related Part Number
PART Description Maker
TSC251G1DXXX-L12CB TSC251G1DXXX-L12CED TSC251G1DXX FPGA, CYCLONE III, 5K LE, 164MQFP Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:106;
IC CYCLONE III FPGA 5K 256-UBGA
IC CYCLONE III FPGA 55K 484 UBGA
IC CYCLONE III FPGA 55K 780 FBGA
IC CYCLONE III FPGA 55K 780FBGA
8-BIT MICROCONTROLLER 8位微控制
Cypress Semiconductor Corp.
Electronic Theatre Controls, Inc.
CA5420A CA5420AM FN1925 A5420A 0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers(0.5MHz????垫??靛????杈???垫?杩???惧ぇ??
0.5MHz/ Low Supply Voltage/ Low Input Current BiMOS Operational Amplifiers
From old datasheet system
Op Amp, BiMOS, Low Supply Voltage, Low Input Current, 0.5MHz, V to 0V Supply Voltage
INTERSIL[Intersil Corporation]
UCN5895 UCN5895A UCN5895EP A5895SLW 5895 BiMOS II 8-BIT SERIAL INPUT, LATCHED SOURCE DRIVERS
BiMOS II 8-BIT SERIAL INPUT LATCHED SOURCE DRIVERS
From old datasheet system
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
TSC251G2DXXX-24IA TSC251G2DXXX-24IB TSC251G2DXXX-L IC CYCLONE III FPGA 80K 484 FBGA
IC CYCLONE III FPGA 80K 780FBGA
IC CYCLONE III FPGA 5K 144 EQFP
IC CYCLONE III FPGA 5K 256 UBGA
IC CYCLONE III FPGA 5K 256-UBGA
IC CYCLONE III FPGA 5K 256 FBGA
IC CYCLONE III FPGA 55K 484 UBGA
8/16-bit Microcontroller with Serial Communication Interfaces 16位产品微控制器的串行通信接口
Atmel, Corp.
5822 BiMOS II 8-BIT SERIAL-INPUT, LATCHED DRIVERS
Allegro
CA3130 High Rellablilty BiMOS Operational Amplifiers
RCA Solid State
5818-F 5818FQ BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40 °C TO 85 °C OPERATION
From old datasheet system
Allegro
CA3240 CA3240A CA3240AE CA3240AE1 CA3240E Op Amp, BiMOS, Dual, MOSFET Inputs, Bipolar Outputs, Low Bias, 4.5MHz
Op Amp, BiMOS, Dual, MOSFET Inputs, Bipolar Outputs, 4.5MHz
Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output
INTERSIL[Intersil Corporation]
5812-F 5812FQ BiMOS II 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS
From old datasheet system
Allegro
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE POWER
CD22M3494MQZ CD22M3494EZ CD22M3494MQA CD22M3494MQA 16 x 8 x 1 BiMOS-E Crosspoint Switch
16x8x1 BiMOS-E Crosspoint Switch; Temperature Range: -40°C to 85°C; Package: 44-PLCC T&R 16-CHANNEL, CROSS POINT SWITCH, PQCC44
INTERSIL[Intersil Corporation]
Intersil, Corp.
 
 Related keyword From Full Text Search System
UCN5910A C代码 UCN5910A wire UCN5910A found UCN5910A Serial UCN5910A pnp
UCN5910A mosfet UCN5910A integrated UCN5910A Package UCN5910A Lead forming UCN5910A international
 

 

Price & Availability of UCN5910A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.15622115135193