| PART |
Description |
Maker |
| 3BH41 3GH41 EE08669 |
Silicon diffused type fast recovery diode for high speed rectifier applications
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
From old datasheet system
HIGH SPEED RECTIFIER APPLICATION (FAST RECOVERY)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| CMHD4150 |
SURFACE MOUNT HIGH SPEED SWITCHING DIODE 0.25 A, 50 V, SILICON, SIGNAL DIODE
SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| 200FXH13 E000411 200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS)
DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
From old datasheet system
|
ToshibaSemiconductor
Toshiba Semiconductor
|
| 1PS181 |
High-Speed Double Diode 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| RD2003JN |
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| BAS70-06S Q62702-A3469 BAS7006S |
From old datasheet system
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping)
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
