PART |
Description |
Maker |
CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32 2 Megabit CMOS Flash Memory Bulk Erase Flash Memory, 2Mb
|
http:// CATALYST[Catalyst Semiconductor]
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AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49 |
LM4250 Programmable Operational Amplifier; Package: SOIC NARROW; No of Pins: 8 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40 LM4308 Mobile Pixel Link Two (MPL-2) - 18-bit CPU Display Interface Master/Slave; Package: MICRO-ARRAY; No of Pins: 49 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40 4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
F49L400BA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory 4兆位(为512k × 8/256K × 16V时仅闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
F49B002UA-70N F49B002UA-70D |
2 Mbit (256K x 8) 5V Only CMOS Flash Memory 2兆位256K × 8V的只有闪存的CMOS 2 Mbit (256K x 8) 5V Only CMOS Flash Memory 2兆位56K × 8V的只有闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
MX29LV002CBQI-90 MX29LV002CBQI-70 MX29LV002CBTI-90 |
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PQCC32 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PDSO32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO40 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 1M X 8 FLASH 3V PROM, 55 ns, PDSO40
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory IC SMT SRAM 128K X 8 70NS 5V SOP-32 SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区32引脚闪存
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
W29C022 |
5-Volt Flash 256K x 8 CMOS FLASH MEMORY
|
Winbond Electronics
|
29F400B-12PC 29F400B-12PI 29F400T-90PC 29F400T-90P |
4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY 4MEGABIT(为512k × 8 / 256K × 16VOLT扇区擦除的CMOS闪存
|
Electronic Theatre Controls, Inc.
|
UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28 8K X 8 STANDARD SRAM, 55 ns, CDIP28 32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷 4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 64 Mb (4M x 16) Boot Sector, Flash Memory SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
BM29F400B BM29F400T 29F400T-12PC 29F400T-12PI 29F4 |
4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位(为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位(为512k × 8)扇区可擦除的CMOS闪速存储器 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
|
Winbond Electronics, Corp. List of Unclassifed Manufacturers
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N28F256 |
256K CMOS Flash Memory
|
Intel
|