PART |
Description |
Maker |
K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M |
1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36 & 2Mx18-Bit Pipelined NtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7D321874C K7D323674C |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
K7S3236U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7J323682C K7J321882C |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R3236 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7N323645MK7N321845M |
1Mx36 & 2Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor Maxim Integrated Products, Inc.
|
K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 1M X 36 ZBT SRAM, 3.5 ns, PBGA165 1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|