| PART |
Description |
Maker |
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp.
Intel Corporation
Intel, Corp.
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
| SST39LF400A SST39VF800A SST39LF800A SST39VF200A SS |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Microchip Technology
|
| DT28F016SA-100 DT28F016SA-150 DA28F016SA-080 E28F0 |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
|
INTEL[Intel Corporation]
|
| 28F016SA |
16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M1 Mx 16, 2 Mx 8) FlashFile存储
|
Intel Corp.
|
| SST39SF040-70-4C-NHE SST39SF020A-70-4I-WHE SST39SF |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Microchip Technology
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| VS28F016SV MS28F016SV |
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY
|
INTEL[Intel Corporation]
|
| LH28F016SANS-70 LH28F016SANS |
Flash Memory
16 Mbit(1 Mbit x 16, 2 Mbit x 8)
|
SHARP[Sharp Electrionic Components]
|
