PART |
Description |
Maker |
SKHI23-17 SKHI23_17 SKHI23/17 |
Medium Power Double IGBT Driver
|
Semikron International
|
CM50DU-24H |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
CM10MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
CM15MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
CM20MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability IGBT Discretes: Low Saturation Voltage Types High Voltage IGBT(VCES200V,VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD 1200V high voltage IGBT
|
IXYS Corporation IXYS, Corp.
|
FID50-12BD FIO50-12BD |
IGBT Discretes MOSFET / IGBT AC Switches: IGBT AC Switches Bidirectional Switch with IGBT and fast Diode Bridge
|
IXYS[IXYS Corporation]
|
APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXGE200N60B04 IXGE200N60B |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT HiPerFAST IGBT
|
IXYS Corporation
|