| PART |
Description |
Maker |
| GM194A |
N P N S I L I C O N P L AN A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| SGH23N60UFD SGH23N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
High Input Impedance
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
