PART |
Description |
Maker |
MRF184S MRF184 MRF184D |
MRF184R1, MRF184SR1 1 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|
MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
UPF1010 |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
|
CREE
|
MRF282 |
MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
MRF5S9070NR1 |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET RF Power Field Effect Transistors
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
MRF9060 MRF9060R1 MRF9060S MRF9060SR1 |
4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
飞思卡尔半导体(中国)有限公司 Motorola, Inc. Advanced Semiconductor MOTOROLA[Motorola, Inc]
|
MRF19045LSR3 MRF19045LR3 |
1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFET RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
|
Freescale (Motorola) MOTOROLA[Motorola, Inc] Motorola, Inc.
|
MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
|
SF0044BA01930S |
44.0 MHz Filter for Broadband Access Applications SAW Filters for Broadband Cable and Cable Router
|
Integrated Circuit Systems ICS
|
SF0044BA01931S |
44.0 MHz Filter for Broadband Access Applications SAW Filters for Broadband Cable and Cable Router
|
Integrated Circuit Systems ICS
|
MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|