| PART |
Description |
Maker |
| ATF13284TR2 ATF-13284 ATF-13284-STR ATF-13284-TR1 |
1-16 GHz Low Noise Gallium Arsenide FET 1-16 GHz的低噪声砷化镓场效应
|
Agilent(Hewlett-Packard...
HP[Agilent(Hewlett-Packard)]
|
| ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136 |
ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| AA028N1-00 |
240 GHz GaAs MMIC Low Noise Amplifier
GT 14C 10#12 4#16 PIN PLUG
24-30 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries Inc
Alpha Industries, Inc.
ALPHA[Alpha Industries]
http://
|
| AA038N1-00 AA038N2-00 |
28-40 GHz的砷化镓MMIC低噪声放大器
GT 8C 2#0 6#12 PIN PLUG
280 GHz GaAs MMIC Low Noise Amplifier
28-40 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries, Inc.
Alpha Industries Inc
ALPHA[Alpha Industries]
http://
|
| TLT-13-6016 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-13-6013 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLA-8-2015 TLA-8-2014 |
Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| CLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
|
| TLA-13-6015 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
