PART |
Description |
Maker |
1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
KTK5164S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KTK5133S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
10-FY07BIA050SM-M523E38 10-FY07BIA050SM-M523E38-3 |
Ultra High-Speed IGBT and Diode
|
Vincotech
|
1SS337 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
1SS181 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
NTE2558 |
Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode
|
NTE[NTE Electronics]
|
HN1D01FU E001975 |
From old datasheet system DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
1SS301 E000262 |
From old datasheet system DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
1SS360F EA08953 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|