| PART |
Description |
Maker |
| GM72V66841CLT GM72V66841CT GM72V66841CT_CLT GM72V6 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
2097152 word x 8 bit x 4 bank synchronous dynamic RAM
|
etc
LG Semicon Co.,Ltd.
LG Semiconductor
|
| MSC23B2321D-XXDS4 MSC23B2321D MSC23B2321D-XXBS4 |
From old datasheet system
2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
4PDT 5A MINI 24VAC
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| HM51W17805B HM51W17805BJ-8 HM51W17805BLJ-8 HM51W17 |
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-3355-0 71; Contact Mating Area Plating: Tin
2097152-word*8-bit Dynamic random access memory
|
Hitachi,Ltd.
|
| M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5 |
From old datasheet system
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5V208RV-12L M5M5V208RV-12LL M5M5V208VP-85L M5M5 |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK）（4分字× 32位同步动态内存模块）
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
