| PART |
Description |
Maker |
| M5M44260CJ M5M44260CJ-5 M5M44260CJ-5S M5M44260CJ-6 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V42 |
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GM71C4256 |
262144 word x 4 Bit CMOS DRAM
|
GoldStar
|
| TC514260BFT TC514260BJ |
262144 WORD X 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| MSM512800C |
262144-Word X 8-Bit DYNAMIC RAM
|
OKI electronic componets
|
| M5M5Y416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| M5M5Y5672TG-20 M5M5Y5672TG-22 M5M5Y5672TG-25 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
http://
RENESAS[Renesas Electronics Corporation]
|
| M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位（32768 - Word位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
