| PART |
Description |
Maker |
| IRF7506PBF IRF7506 IRF7506TRPBF IRF7406PBF IRF7506 |
Generation V Technology
HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
ULTRA LOW ON RESISTANCE
|
IRF[International Rectifier]
|
| IRF7303 |
Generation V Technology
|
Kersemi Electronic Co., Ltd...
|
| IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IDT8T49N004I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
