PART |
Description |
Maker |
IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRF7303PBF IRF7303PBF-15 |
GENERATION V TECHNOLOGY HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050ヘ ) HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050Ω )
|
International Rectifier
|
IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
IRF9952PBF IRF9952TRPBF |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
IRF7413GTRPBF IRF7413GPBF |
Generation V Technology Ultra Low On-Resistance
|
International Rectifier
|
IRF7314PBF IRF7314TRPBF IRF7314PBF-15 |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel generation v technology
|
International Rectifier
|
KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
IRF7304TR |
Generation V Technology -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|