PART |
Description |
Maker |
IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
IRLML5103TRPBF |
Generation V Technology
|
TY Semiconductor Co., L...
|
V23990-K420-A60-0B-PM V23990-K420-A60-0A-PM V23990 |
Mitsubishi Generation 6.1 technology
|
Vincotech
|
IRF7501PBF IRF7501TRPBF IRF7501PBF-15 |
Generation V Technology Ulrtra Low On-Resistance
|
International Rectifier
|
IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
IRF7413GTRPBF IRF7413GPBF |
Generation V Technology Ultra Low On-Resistance
|
International Rectifier
|
KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|