| PART |
Description |
Maker |
| MN102L360C |
Microcomputer - 16bit - General Purpose
From old datasheet system
|
Panasonic
|
| MN102H460B |
Microcomputer - 16bit - General Purpose
From old datasheet system
|
Panasonic
|
| MN102H81G |
Microcomputer - 16bit - General Purpose
From old datasheet system
|
Panasonic
|
| 2SB1709 |
Genera purpose amplification(−12V −1.5A)
|
ROHM
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M38503E4SS M38503MXH M37516RSS M38504E6FP M38504E6 |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer
RAM size:896 bytes; single-chip 8-bit CMOS microcomputer
RAM size:192 bytes; single-chip 8-bit CMOS microcomputer
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer
Single Chip 8-Bit CMOS Microcomputer
3850 Series Microcontrollers: General Purpose with A/D Converter
RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size:640 bytes; single-chip 8-bit CMOS microcomputer
RAM size:384 bytes; single-chip 8-bit CMOS microcomputer
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer
RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| UPD17016GF-XXX-3B9 UPD17017GF-XXX-3B9 |
DTS 4B microcomputer with on-chip ROM (3836x16) & RAM (320x4)
Digital tuning 4-bit SC microcomputer 17K series
|
NEC
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| UPD750008 UPD750008CUA-XXX UPD750008CU-XXX UPD7500 |
75XL series 4B-pin microcomputer on-chip ROM (8Kx8) & RAM(512x4)
4-bit single-chip microcomputer
|
NEC
|
