| PART |
Description |
Maker |
| 1N5070 1N5075 1N5078 1N5100 1N5105 1N5103 1N5104 1 |
POWER ZENERS
45 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
180 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 160 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 36 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 14 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 16 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 30 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 18 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 33 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 56 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 100PF 100V 5% NP0(C0G) RAD.20 .20X.20 TR-13 20 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Power Zeners. 3 Watt 电源齐纳基准源3瓦特
POWER ZENERS 22 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 220 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 320 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
FUSED-IN-GLASS METALLARGICALTY BONDED 3 WAIT ZENER DIODES
|
MICROSEMI CORP-SCOTTSDALE
TE Connectivity, Ltd.
Bourns, Inc.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
POWER ZENERS
|
| STD3LN62K3 STF3LN62K3 STP3LN62K3 STU3LN62K3 |
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET DPAK
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3 Power MOSFET DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3 Power MOSFE DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET IPAK
|
STMicroelectronics
STATEK CORPORATION
ST Microelectronics
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| BD433 BD435 BD436 BD438 4127 BD437 BD434 -BD437 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| BD237 ON0191 |
From old datasheet system
POWER TRANSISTORS NPN SILICON
Plastic Medium Power Silicon NPN Transistor
CASE 77-09 TO-225AA TYPE
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204
SWITCHMODE™ Series NPN Silicon Power Transistor
SWITCHMODE Series NPN Silicon Power Transistor
SITCHMODE Series NPN Silicon Power Transistor
|
ONSEMI[ON Semiconductor]
|
| 1N3664 1N3494 1N3493 1N3663 1N3491 1N3492 1N3495 S |
Silicon Power Rectifier
Standard Rectifier (trr more than 500ns)
Silicon Power Rectifier 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-208AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
|
