PART |
Description |
Maker |
UPA1916 UPA1916TE UPA1916TE-T2 UPA1916TE-T1 |
Pch enhancement-type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1911ATE UPA1911A UPA1911ATE-T2 UPA1911ATE-T1 |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1815GR-9JG-E1 UPA1815GR-9JG-E2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD) P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1730G-E1 UPA1730TP-E2 UPA1730TP-E1 UPA1730G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement-type MOS FET
|
NEC[NEC]
|
2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK3366-Z-E1 2SK3366-Z-E2 |
N-channel enhancement type Po MOS FET
|
NEC
|
2SK1384 2SK1384R |
N-CHANNEL ENHANCEMENT TYPE MOS-FET
|
ETC
|
2SK3365-Z-E1 2SK3365-Z-E2 |
N-channel enhancement type Po MOS FET
|
NEC
|
UPA1726G-E2 UPA1726G-E1 |
N-channel enhancement type power MOS FET
|
NEC
|