| PART |
Description |
Maker |
| RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET
30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MSN3402 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN2306 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSP3407 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| 2SK2731 A5800299 |
Transistors > MOS FET > Small Signal MOS FET
From old datasheet system
Interface and switching (30V, 200mA)
Interface and switching (30V/ 200mA)
|
ROHM[Rohm]
|
| UM6K1 UM6K1N A5800523 |
Transistors > MOS FET > Small Signal MOS FET
From old datasheet system
Small switching (30V, 0.1A)
Small switching (30V/ 0.1A)
|
ROHM[Rohm]
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type)
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
From old datasheet system
|
NEC[NEC]
|
| NP34N055IHE NP34N055HHE NP34N055HHE-AZ |
Nch MOS FET for High-speed switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
NEC[NEC]
Cypress Semiconductor, Corp.
|
