| PART |
Description |
Maker |
| 2SK2881 |
FIELD-EFFECT TRANSISTOR
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type)
|
Isahaya Electronics Corporation
ETC
List of Unclassifed Manufacturers
|
| 2SK43310 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Corpora...
|
| 2SK370 |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK214507 |
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK370 2SK37007 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK17007 2SK170 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK389 E001543 |
From old datasheet system
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| SVC208 |
Varactor Diode (IOCAP) for FM Low-Voltage Electronic Tuning Silicon Diffused Junction Type
|
Sanyo
|
| 2SK58 |
From old datasheet system
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise)
|
Sony Corporation
|
| 2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
http://
|
