| PART |
Description |
Maker |
| 2SC3569 |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
NEC
http://
|
| 2SC4615 2SA1772 2SA1772ETP-FA |
1000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Epitaxial Planar Silicon Transistor for High-Voltage Driver Applications(高电压驱动器应用的PNP硅外延平面型晶体 进步党硅外延平面晶体管的高压驱动器应用（高电压驱动器应用的新进步党硅外延平面型晶体管
NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications
PNP Epitaxial Planar Silicon Transistor High-Voltage Driver Applications
|
Sanyo Electric Co., Ltd.
|
| 2SA1739 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC3938 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC3360 2SC3360-L 2SC3360-T2B 2SC3360-T1B |
Silicon transistor
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC
|
| 2SA1461-T1B 2SA1461-T2B 2SA1461-L 2SA1461 |
Silicon transistor
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC
|
| 2SA1462 2SA1462-T1B 2SA1462-L 2SA1462-T2B |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor
|
NEC
|
| 2SC1621 2SC1621-L 2SC1621-T2B 2SC1621-T1B |
Silicon transistor
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| 2SC4176 2SC4176-T1 2SC4176-T2 |
Silicon transistor
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| 2SC4553 |
Silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC[NEC]
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
